Page 10 - ITU Journal Future and evolving technologies Volume 2 (2021), Issue 7 – Terahertz communications
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ITU Journal on Future and Evolving Technologies, Volume 2 (2021), Issue 7



               Terahertz wireless communications in space

               Pages 31–38
               Meltem Civas, Ozgur B. Akan

               The New Space Era has increased communication traffic in space by new space missions led by public
               space agencies and private companies. Mars colonization is also targeted by crewed missions in the
               near future. Due to increasing space traffic near Earth and Mars, the bandwidth is getting congested.
               Moreover, the downlink performance of the current missions is not satisfactory in terms of delay and
               data  rate.  Therefore,  to  meet  the  increasing  demand  in  space  links,  Terahertz  band  (0.1–10  THz)
               wireless communications are proposed in this study. In line with this, we discuss the major challenges
               that the realization of THz band space links pose and possible solutions. Moreover, we simulate Mars-
               space THz links for the case of a clear Mars atmosphere, and a heavy dust storm to show that even in
               the worst conditions, a large bandwidth is available for Mars communication traffic.
               View Article

               Fundamental  limits  of  high-efficiency  silicon  and  compound

               semiconductor power amplifiers in 100–300 GHz bands

               Pages 39–50
               James F. Buckwalter, Mark J. W. Rodwell, Kang Ning, Ahmed Ahmed, Andrea Arias-Purdue, Jeff
               Chien, Everett O'Malley, Eythan Lam

               This paper reviews the requirements for future digital arrays in terms of power amplifier requirements
               for output power and efficiency and the device technologies that will realize future energy-efficient
               communication  and  sensing  electronics  for  the  upper  millimeter-wave  bands  (100–300  GHz).
               Fundamental device technologies are reviewed to compare the needs for compound semiconductors and
               silicon processes. Power amplifier circuit design above 100 GHz is reviewed based on load line and
               matching element losses. We present recently presented class-A and class-B PAs based on a InP HBT
               process that have demonstrated record efficiency and power around 140 GHz while discussing circuit
               techniques that can be applied in a variety of integrated circuits.
               View Article


































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