1 Scope
2 References
3 Definitions
4 Abbreviations
5 Conventions
6 Overview
     6.1 Line test reference model
     6.2 Test measurements
7 Test management and communications
Annex A  Specific requirements of a SELT-PMD
     A.1 SELT-PMD functions
          A.1.1 SELT-PMD measurement functions
               A.1.1.1 Measurement of uncalibrated echo response
               A.1.1.2 Measurement of SELT quiet line noise
               A.1.1.3 Measurement of impulse noise
               A.1.1.4 Estimation of uncalibrated echo response variance
     A.2 SELT-PMD management entity
          A.2.1 SELT-PMD configuration parameters
               A.2.1.1 SELT UER maximum measurement duration
               A.2.1.2 SELT quiet line noise maximum measurement duration
          A.2.2 SELT-PMD measurement parameters
               A.2.2.1 SELT uncalibrated echo response
               A.2.2.2 SELT uncalibrated echo response group size
               A.2.2.3 SELT variance of uncalibrated echo response
               A.2.2.4 SELT quiet line noise
               A.2.2.5 SELT quiet line noise group size
               The SELT quiet line noise group size shall be reported if the option for extended bandwidth QLN SELT is supported; otherwise, reporting of the group size is optional. If the SELT quiet line noise group size is not reported, the SELT quiet line noise g...
               A.2.2.6 SELT impulse noise parameters
          A.2.3 SELT control parameters
               A.2.3.1 SELT UER measurement enable C (SELT-UME-C)
               A.2.3.2 SELT UER measurement enable R (SELT-UME-R)
               A.2.3.3 SELT QLN measurement enable C (SELT-QME-C)
               A.2.3.4 SELT QLN measurement enable R (SELT-QME-R)
          A.2.4 SELT-PMD parameter partitioning
     A.3 Test management and communications
          A.3.1 CO SELT-PMD control
          A.3.2 CO SELT-PMD request
          A.3.3 CO SELT-PMD status
          A.3.4 CO SELT UER results status
          A.3.5 CO SELT QLN results status
Annex B  Specific requirements of a SELT-P
     B.1  SELT-P functions
          B.1.1 SELT-P derived parameters
               B.1.1.1 Loop termination indicator
               B.1.1.2 Loop length
               B.1.1.3 Loop topology
                    B.1.1.3.1 Loop segment length (LOOP_SEGM_LENGTH)
                    B.1.1.3.2 Loop segment bridged tap indicator (LOOP_SEGM_BRIDGEDTAP)
               B.1.1.4 Missing micro-filter or splitter
               B.1.1.5 Impulse noise statistics
               B.1.1.6 Attenuation characteristics
               B.1.1.7 Attenuation characteristics group size
               B.1.1.8 Capacity estimate
     B.2 SELT-P management entity
          B.2.1 SELT-P configuration parameters
               B.2.1.1 Capacity estimate calculation enabling (CECE)
               B.2.1.2 Capacity estimate signal PSD (CAP-SIGNALPSD)
               B.2.1.3  Capacity estimate noise PSD (CAP-NOISEPSD)
               B.2.1.4 Capacity estimate target noise margin (CAP-TARSNRM)
          B.2.2 SELT-P derived parameters
               B.2.2.1  Loop termination indicator
               B.2.2.2  Loop length
               B.2.2.3  Loop topology
               B.2.2.4 Missing micro-filter or splitter
               B.2.2.5 Impulse noise statistics
               B.2.2.6 Attenuation characteristics
               B.2.2.7  Capacity estimate
          B.2.3  SELT-PMD network management element partitioning
     B.3 Test management and communications
Annex C  Specific requirements for a DELT-PMD
Annex D  Specific requirements for a DELT-P
Annex E  Specific requirements for a MELT-PMD
     E.1 MELT-PMD functions
          E.1.1 MELT-PMD measurement functions
               E.1.1.1 Measurement of the 4-element DC resistance with a controlled metallic voltage
                    E.1.1.1.1 4-element DC resistance
                    E.1.1.1.2 Test voltages for the measurement of the 4-element DC resistance with a controlled metallic voltage
                    E.1.1.1.3 Test currents for the measurement of the 4-element DC resistance with a controlled metallic voltage
               E.1.1.2 Measurement of the 3-element capacitance with a controlled metallic voltage
                    E.1.1.2.1 3-element capacitance
                    E.1.1.2.2 Test voltages for the measurement of the 3-element capacitance with a controlled metallic voltage
               E.1.1.3 Measurement of foreign voltages
               E.1.1.4 Measurement of the loop capacitance with a high metallic voltage
                    E.1.1.4.1 Loop capacitance
                    E.1.1.4.2 Test voltage for the measurement of the loop capacitance with a high metallic voltage
               E.1.1.5 Measurement of the loop resistance with a high metallic voltage
                    E.1.1.5.1 Loop resistance
                    E.1.1.5.2 Test voltage for the measurement of the loop resistance with a high metallic voltage
               E.1.1.6 Measurement of the 3-element complex admittances with a controlled metallic voltage
                    E.1.1.6.1 3-element complex admittances
                    E.1.1.6.2 Test voltages for the measurement of the 3-element complex admittance with a controlled metallic voltage
               E.1.1.7 Measurement of the loop complex admittance with a high metallic voltage
                    E.1.1.7.1 Loop complex admittance
                    E.1.1.7.2  Test voltage for the measurement of the loop complex admittance with a high metallic voltage
               E.1.1.8 Combined measurement of 4-element resistance and 3-element capacitance
          E.1.2 MELT-PMD non-measurement functions
               E.1.2.1 Pair identification tone generation
     E.2 MELT-PMD management entity
          E.2.1 MELT-PMD management entity configuration parameters
               E.2.1.1 Measurement class
               E.2.1.2  Peak metallic voltage between tip and ring
               E.2.1.3  Test frequency for active AC measurements
               E.2.1.4  Pair identification tone frequency
               E.2.1.5  Pair identification tone timeout
               E.2.1.6  Maximum far-end signature conduction voltage
               E.2.1.7 Minimum far-end signature conduction voltage
          E.2.2 MELT-PMD management entity reporting parameters
               E.2.2.1  Test frequency for active AC measurements
               E.2.2.2 Input impedance for foreign voltage measurements
               E.2.2.3  Peak source voltage for the measurement of the loop complex admittance with a high metallic voltage
               E.2.2.4 Reliability indicator for reporting parameters
               E.2.2.5 Time stamp
          E.2.3 MELT-PMD management entity measurement parameters
               E.2.3.1 4-element DC resistance with controlled metallic voltage
               E.2.3.2 DC test voltages for the measurement of the 4-element DC resistance with a controlled metallic voltage
               E.2.3.3 Test currents for the 4-element DC resistance with a controlled metallic voltage
               E.2.3.4 3-element capacitance with controlled metallic voltage
               E.2.3.5 Foreign voltage
               E.2.3.6 Loop capacitance with high metallic voltage
               E.2.3.7 Loop resistance with high metallic voltage
               E.2.3.8  Test voltage for the measurement of the loop resistance with a high metallic voltage
               E.2.3.9 3-element complex admittance with controlled metallic voltage
               E.2.3.10 Loop complex admittance with high metallic voltage
               E.2.3.11 Test voltages for the measurement of the 3-element capacitance with a controlled metallic voltage
               E.2.3.12 Test voltage for the measurement of the loop capacitance with a high metallic voltage
               E.2.3.13 Test voltages for the measurement of the 3-element complex admittance with a controlled metallic voltage
               E.2.3.14 Test voltage for the measurement of the loop complex admittance with a high metallic voltage
               E.2.3.15 Reliability indicator for measurement parameters
          E.2.4 MELT-PMD management entity parameter partitioning
     E.3 Test management
          E.3.1 MELT-PMD control
          E.3.2 MELT-PMD request
          E.3.3 MELT-PMD status
          E.3.4 MELT results status
Annex F  Specific requirements for a MELT-P
     F.1 MELT-P functions
          F.1.1 MELT-P derived parameters
               F.1.1.1 Identification of an open wire failure
                    F.1.1.1.1 Open wire failure type
                    F.1.1.1.2 Distance to the open wire failure
               F.1.1.2 Identification of a short circuit failure
                    F.1.1.2.1 Short circuit failure type
               F.1.1.3 Leakage identification
               F.1.1.4 Resistive fault identification
               F.1.1.5 Foreign voltage classification
                    F.1.1.5.1 Foreign voltage type
                    F.1.1.5.2 Foreign voltage level class
               F.1.1.6 Far-end signature topology identification
                    F.1.1.6.1 Far-end signature topology type
               F.1.1.7 CPE identification capacitive
     F.2 MELT-P management entity
          F.2.1 MELT-P management entity configuration parameters
               F.2.1.1 Loop resistance classification threshold
               F.2.1.2 Loop parameters per unit length
               F.2.1.3 Hazardous DC voltage level
               F.2.1.4 Hazardous AC voltage level
               F.2.1.5 Foreign EMF DC voltage level
               F.2.1.6 Foreign EMF AC voltage level
               F.2.1.7 System capacitance at the CPE side
          F.2.2 MELT-P management entity derived parameters
               F.2.2.1 Identification of an open wire failure
                    F.2.2.1.1 Open wire failure type
                    F.2.2.1.2 Distance to the open wire failure
               F.2.2.2 Identification of a short circuit failure
                    F.2.2.2.1 Short circuit failure type
               F.2.2.3 Leakage identification
               F.2.2.4 Resistive fault identification
               F.2.2.5 Foreign voltage classification
                    F.2.2.5.1 Foreign voltage type
                    F.2.2.5.2 Foreign voltage level class
               F.2.2.6 Far-end signature topology identification
                    F.2.2.6.1 Far-end signature topology type
               F.2.2.7 Reliability indicator for derived parameters
          F.2.3 MELT-P management entity parameter partitioning
     F.3 Test management
Appendix I  SELT application models
     I.1 CO SELT application models
          I.1.1 CO SELT instantiation 1: SELT-P outside the DSLAM
          I.1.2 CO SELT instantiation 2: SELT-P function inside DSLAM
          I.1.3 CO SELT instantiation 3: SELT-P inside xTU-C
Bibliography